StorageNewsletter.com, July 4th 2017 July 4, 2017,
Volume 233, Issue 1
"Toshiba America Electronic Components, Inc. (TAEC) announced the latest generation of its BiCS Flash three-dimensional (3D) flash memory.
This BiCS Flash device features 4-bit-per-cell, quadruple-level cell (QLC) technology and is the first 3D flash memory device to do so. QLC technology enables larger (768Gb) die capacity than the company's third-generation 512Gb 3-bit-per-cell, TLC, and pushes the boundaries of flash memory technology..."